SSM6K08FU high speed switching applications small package low on resistance: r on = 105 m ? (max) (@v gs = 4 v) r on = 140 m ? (max) (@v gs = 2.5 v) high-speed switching: t on = 16 ns (typ.) t off = 15 ns (typ.) maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 12 v dc i d 1.6 drain current pulse i dp 3.2 a drain power dissipation p d (note1) 300 mw channel temperature t ch 150 c storage temperature range t stg 55~150 c note1: mounted on fr4 board. (25.4 mm 25.4 mm 1.6 t, cu pad: 0.32 mm 2 6) figure 1. marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm weight: 6.8 mg (typ.) 6 k d c 4 1 2 3 5 4 123 6 5 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 12 v, v ds 0 1 a v (br) dss i d 1 ma, v gs 0 20 drain-source breakdown voltage v (br) dsx i d 1 ma, v gs 12 v 12 v drain cut-off current i dss v ds 20 v, v gs 0 1 a gate threshold voltage v th v ds 3 v, i d 0.1 ma 0.5 1.2 v forward transfer admittance y fs v ds 3 v, i d 0.8 a (note2) 2.0 s i d 0.8 a, v gs 4 v (note2) 77 105 i d 0.8 a, v gs 2.5 v (note2) 100 140 drain-source on resistance r ds (on) i d 0.8 a, v gs 2.0 v (note2) 125 210 m input capacitance c iss v ds 10 v, v gs 0, f 1 mhz 306 pf reverse transfer capacitance c rss v ds 10 v, v gs 0, f 1 mhz 44 pf output capacitance c oss v ds 10 v, v gs 0, f 1 mhz 74 pf turn-on time t on 16 switching time turn-off time t off v dd 10 v, i d 0.8 a, v gs 0~2.5 v, r g 4.7 15 ns note2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operating current value is i d 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th. (relationship can be established as follows: v gs (off) v th v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 2.5 v or higher to turn on this product. (c) v out v dd 10 v r g 4.7 d.u.
1% v in : t r , t f
5 ns common source ta 25c v dd out in 2.5 v 0 10 s r g t f t on 90% 10% 2.5 v 0 v 10% 90% t off t r v dd v ds ( on ) SSM6K08FU product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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